| 英文别名： |
Tellurium dioxide;Tellurium(IV) oxide;Tellurium oxide;TeO2 radical;E4-tellane;technetium dioxide;tellerium dioxide;Tellur(IV) iodid;tellurite oxide;tellurium iodide;tellurium(IV) dioxide;TELLURIUM(IV) IODIDE;Tellurous anhydride;tellurous dioxide;tetraiodo-;Telluria;Tellurium oxide (TeO2);Tellurite (TeO2);TeO2;397E9RKE83;Telluride Oxide;oxotellane oxide;Tellurium(iv)oxide;6-Chlorobutyric Acid;O2Te;Tellurium dioxide, >=99%;Tellurium dioxide, >=97.0%;Tellurium dioxide, optical grade;O2Te, ??;Tellurium dioxide, 99.9995%;NSC8956;LAJZODKXOMJMPK-UHFFFAOYSA-N;Tellurium(IV) oxide, Puratronic(R);Tellurium Dioxide;D92683;Tellurium(IV) oxide, 99.999% (metals basis);AKOS016370677;7446-07-3;NS00082647;EC 231-193-1;Tellurium oxide(119TeO2) (9CI);DTXSID8052487;Tellurite (mineral);14832-87-2;TELLURIUM DIOXIDE;SY048145;Tellurium dioxide, 99.995% trace metals basis;CS-0085576;T3254;FT-0695210;NSC-8956;59863-17-1;MFCD00011263;TELLURIUM DIOXIDE [MI];Q425220;NSC 8956;Silicon Carbide (SiC) Sputtering Targets;UNII-397E9RKE83;EINECS 231-193-1;Tellurium oxide(teo2)99.99% |
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